Sputter System

Specifications

• Single cabinet design with most assemblies in the cabinetry except water chiller and roughing pump.
• Dual stage, direct drive, rotary vane 3.8 CFM vacuum pump.
• 81 I/ps turbomolecular pump.
• Vacuum gauge to 1X10-5 Torr.
• Manually controlled operation in sputter mode.
• RF Power supply; 300 Watt RF, 13.56 MHz with matching network
• Siemens S7-200 series PLC based control. "Touch-Panel" control for setting system parameters and diagnostics.
• Pass word protected process and recipes
• Digital display of vacuum
• Digital display of power
• 2" diameter RF/DC planar magnetron sputter source, requires 1 gpm at 30° C.
• Sputter down configuration
• Safety Interlock Hardware for vacuum and high voltage.
• Stage diameter accommodates up to 200 mm diameter substrates.
• Stage rotation, 2-RPM on-off selector switch.
• Plus/minus 20% non-uniformity over 200 mm diameter substrates with rotation.
• Chamber 300 mm diameter x 400 mm height stainless steel construction
• System is 535 mm x 648 mm footprint x 1219 mm height.
• OPTIONAL:
• Heated stage to 400° C or 950° C.
• Cooled stage.
• RF biased stage.
• Mass Flow Control - 3 gas maximum
• Coolant Chiller / Recirculator - required
• Digital Thickness Monitor, 1 to 999nm
• Oxygen Preparation to Class "B" Specifications for reactive sputtering